vishay siliconix si4816dy document number: 71121 s09-0868-rev. g, 18-may-09 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 definition ? little foot ? plus power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( )i d (a) channel-1 30 0.022 at v gs = 10 v 6.3 0.030 at v gs = 4.5 v 5.4 channel-2 0.013 at v gs = 10 v 10 0.0185 at v gs = 4.5 v 8.6 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 30 0.50 v at 1.0 a 2.0 g 1 d 1 a/s 2 d 2 /s 1 a/s 2 d 2 /s 1 g 2 d 2 /s 1 so- 8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4 8 16dy -t1-e3 (lead (p b )-free) si4 8 16dy -t1-ge3 (lead (p b )-free and halogen-free) g 2 s 2 n-channel 2 mosfet schottky diode a g 1 d 1 n-channel 1 mosfet s 1 /d 2 notes: a. surface mounted on 1" x 1" fr4 board. b. starting date code w46baa. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit 10 s steady state 10 s steady state drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 6.3 5.3 10 7.7 a t a = 70 c 5.4 4.2 8.2 6.2 pulsed drain current i dm 30 40 continuous source current (diode conduction) a i s 1.3 0.9 2.2 1.15 avalanche current b l = 0.1 mh i as 12 25 single pulse avalanche energy b e as 7.2 31.25 mj maximum power dissipation a t a = 25 c p d 1.4 1.0 2.4 1.25 w t a = 70 c 0.9 0.64 1.5 0.8 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel-1 channel-2 schottky unit typ. max. typ. max. typ. max. maximum junction-to-ambient a t 10 s r thja 72 90 43 53 48 60 c/w steady state 100 125 82 100 80 100 maximum junction-to-foot (drain) steady state r thjc 51 63 25 30 28 35
www.vishay.com 2 document number: 71121 s09-0868-rev. g, 18-may-09 vishay siliconix si4816dy notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 0.8 2 v ch-2 1.0 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a ch-2 100 v ds = 30 v, v gs = 0 v, t j = 85 c ch-1 15 ch-2 2000 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch-1 20 a ch-2 30 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 6.3 a ch-1 0.018 0.022 v gs = 10 v, i d = 10 a ch-2 0.0105 0.013 v gs = 4.5 v, i d = 5.4 a ch-1 0.024 0.030 v gs = 4.5 v, i d = 8.6 a ch-2 0.015 0.0185 forward transconductance b g fs v ds = 15 v, i d = 6.3 a ch-1 17 s v ds = 15 v, i d = 10 a ch-2 28 diode forward voltage b v sd i s = 1.3 a v, v gs = 0 v ch-1 0.7 1.1 v i s = 1 a v, v gs = 0 v ch-2 0.47 0.5 dynamic a total gate charge q g channel-1 v ds = 15 v, v gs = 5 v, i d = 6.3 a channel-2 v ds = 15 v, v gs = 5 v, i d = - 10 a ch-1 8.0 12 nc ch-2 15 23 gate-source charge q gs ch-1 1.75 ch-2 5.3 gate-drain charge q gd ch-1 3.2 ch-2 4.6 gate resistance r g ch-1 1.5 6.1 ch-2 0.5 2.6 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 channel-2 v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 ch-1 10 20 ns ch-2 15 30 rise time t r ch-1 5 10 ch-2 5 10 turn-off delay time t d(off) ch-1 26 50 ch-2 44 80 fall time t f ch-1 8 16 ch-2 12 24 source-drain reverse recovery time t rr i f = 1.3 a, di/dt = 100 a/s ch-1 30 60 i f = 2.2 a, di/dt = 100 a/s ch-2 32 70 schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 1.0 a 0.47 0.50 v i f = 1.0 a, t j = 125 c 0.36 0.42 maximum reverse leakage current i rm v r = 30 v 0.004 0.100 ma v r = 30 v, t j = 100 c 0.7 10 v r = - 30 v, t j = 125 c 3.0 20 junction capacitance c t v r = 10 v 50 pf
document number: 71121 s09-0868-rev. g, 18-may-09 www.vishay.com 3 vishay siliconix si4816dy channel-1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0246 8 10 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 2 v 1 v 0.000 0.006 0.012 0.01 8 0.024 0.030 0 8 16 24 32 40 ( ) e c n a t s i s e r - n o - r ) n o ( s d i d - drain c u rrent (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 v ds = 15 v i d = 6.3 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g transfer characteristics capacitance on-resistance vs. junction temperature 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t c = 125 c - 55 c 25 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 200 400 600 8 00 1000 06121 8 24 30 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss ) f p ( e c n a t i c a p a c - c 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 6.3 a t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n (
www.vishay.com 4 document number: 71121 s09-0868-rev. g, 18-may-09 vishay siliconix si4816dy channel-1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c 40 10 1 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 25 c - 1.0 - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) i d = 10 a ( ) e c n a t s i s e r - n o - r ) n o ( s d 0.001 0 1 100 40 60 10 0.1 time (s) 20 8 0 ) w ( r e w o p 0.01 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 100 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 100
document number: 71121 s09-0868-rev. g, 18-may-09 www.vishay.com 5 vishay siliconix si4816dy channel-1 typical characteristics 25 c, unless otherwise noted channel-2 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t output characteristics on-resistance vs. drain current 0 8 16 24 32 40 0246 8 10 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 2 v 0.000 0.006 0.012 0.01 8 0.024 0.030 0 8 16 24 32 40 v gs = 4.5 v v gs = 10 v ( ) e c n a t s i s e r - n o - r ) n o ( s d i d - drain c u rrent (a) transfer characteristics capacitance 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 25 c 0 500 1000 1500 2000 2500 0 6 12 1 8 24 30 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c
www.vishay.com 6 document number: 71121 s09-0868-rev. g, 18-may-09 vishay siliconix si4816dy channel-2 typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 10 0 6 12 1 8 24 30 v ds = 15 v i d = 9.5 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c 40 10 1 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 25 c - 1.0 - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 9.5 a t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( 0.00 0.01 0.02 0.03 0.04 0.05 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) i d = 9.5 a ( ) e c n a t s i s e r - n o - r ) n o ( s d 0.001 0 1 100 40 60 10 0.1 time (s) 20 8 0 ) w ( r e w o p 0.01
document number: 71121 s09-0868-rev. g, 18-may-09 www.vishay.com 7 vishay siliconix si4816dy channel-2 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient sq u are w a v e p u lse d u ration (s) f e d e z i l a m r o n t n e i s n a r t e v i t c e f e c n a d e p m i l a m r e h t 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 d u ty cycle = 0.5 0.2 0.1 0.05 0.02 single p u lse 100 1. d u ty cycle, d = 2. per unit base = r thja = 8 2 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t
www.vishay.com 8 document number: 71121 s09-0868-rev. g, 18-may-09 vishay siliconix si4816dy schottky typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71121 . reverse current vs. junction temperature 0 25 50 75 100 125 150 20 10 0.0001 ) a m ( t n e r r u c e s r e v e r - i r t j - temperat u re (c) 30 v 24 v 0.001 0.01 0.1 1 capacitance v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0 40 8 0 120 160 200 0 6 12 1 8 24 30 c oss forward voltage drop 0.0 0.3 0.6 0.9 1.2 1.5 10 1 ) a ( t n e r r u c d r a w r o f - i f v f - for w ard v oltage drop ( v ) t j = 150 c t j = 25 c
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